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STP12NM50 MOSFET

Name: STP12NM50 MOSFET
Brand: RKSEMITRONICS
Price: 205 INR
Availability: InStock

Price 205 INR/ Piece

Get a Price/Quote

MOQ : 25 Pieces

STP12NM50 MOSFET Specification

Input
Gate (G)

Output
Drain (D)

Response Time
Rise Time: 22ns, Fall Time: 13ns

Interface
Through Hole

Features
High-speed switching, Low gate charge, Low RDS(on)

Components
Single MOSFET

Thermal Conductivity
Thermal Resistance, Junction-to-Case: 3C/W

Operating Temperature
-55C to +150C

Power Supply
DC

Power Source
External DC

Usage
Switching and Amplifier Applications

Product Type
MOSFET

Application
Power Management, Motor Control, Switching Circuits

Rated Voltage
500V

Supply Voltage
Max Drain-Source Voltage (Vds): 500V

Size
TO-220

Dimension (L*W*H)
10.16 x 4.7 x 15.75 mm (approx.)

Function
N-channel MOSFET

Color
Black / Metallic

Weight
2.2g (typical)

Capacity
12A Continuous Drain Current

Current Rating
12A

Thickness
Standard TO-220 package

Maximum Power Dissipation (Pd)
125W

Package Type
TO-220

Mounting Type
Through Hole

Maximum Gate-Source Voltage (Vgs)
30V

Gate Threshold Voltage (Vgs(th))
2V - 4V

Pin Count
3

Lead Free Status
RoHS Compliant

RDS(on) (Max)
0.38 at Vgs = 10V

Polarity
N-channel

Peak Pulsed Drain Current (Id, Pulse)
48A

STP12NM50 MOSFET Trade Information

Minimum Order Quantity
25 Pieces

Supply Ability
1000 Pieces Per Month

Delivery Time
7-10 Days

About STP12NM50 MOSFET

Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 500 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 350 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 39 nC Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 160 W Channel Mode: Enhancement Tradename: MDmesh Series: STP12NM50 Packaging: Tube Brand: STMicroelectronics Configuration: Single Forward Transconductance - Min: 5.5 S Height: 9.15 mm Length: 10.4 mm Product Type: MOSFET Rise Time: 10 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Type: MOSFET Typical Turn-On Delay Time: 20 ns Width: 4.6 mm Unit Weight: 2 g

Efficient Power Handling for Demanding Applications

Engineered for high-efficiency performance, the STP12NM50 MOSFET is optimized for use in circuits requiring reliable power switching and amplification. With a maximum drain-source voltage of 500V and continuous drain current capability up to 12A, this device is well-suited for power management systems and robust load drives encountered in industrial environments.

High-Speed Switching for Enhanced Circuit Performance

This N-channel MOSFET offers fast switching characteristics, making it advantageous for circuits needing quick response times. Its rise time of 22ns and fall time of 13ns minimize switching losses and improve system efficiency, supporting dynamic operations such as motor control and high-frequency power supplies.

Rugged, RoHS-Compliant Construction

Featuring a standard TO-220 through-hole package, the STP12NM50 combines mechanical durability with excellent thermal conductivity. Its RoHS-compliant, lead-free status makes it an environmentally responsible choice for new designs, ensuring compatibility with global regulations for electronic products.

FAQ's of STP12NM50 MOSFET:

Q: How can the STP12NM50 MOSFET be effectively integrated into power management circuits?

A: The STP12NM50 can be easily integrated into power management circuits thanks to its high voltage and current handling capabilities. Use it for switch-mode power supplies, DC-DC converters, or motor drivers, ensuring the gate drive voltage is maintained within its 2V-4V threshold for reliable operation.

Q: What are the primary benefits of using the STP12NM50 in switching and amplifier applications?

A: Its low RDS(on) of 0.38 at Vgs = 10V and fast switching times (22ns rise, 13ns fall) reduce conduction and switching losses, leading to greater efficiency and improved thermal performance in both switching and amplifier circuits.

Q: When should you consider the STP12NM50 for your design projects?

A: This MOSFET is ideal when your design requires handling up to 500V and 12A, rapid switching, high efficiency, and robustness in a standard TO-220 package for easy through-hole mounting.

Q: Where can suppliers and traders in Morocco source the STP12NM50?

A: Authorized electronic component distributors and trading companies in Morocco commonly stock the STP12NM50. Ensure you purchase from reputable suppliers for RoHS-compliant, genuine parts.

Q: What is the process for mounting the STP12NM50 in a circuit?

A: The STP12NM50 comes in a TO-220 through-hole package, so it can be soldered directly onto a PCB or connected via a heatsink for better thermal management. Ensure proper pin orientation: Gate (G), Drain (D), and Source (S).

Q: How does the STP12NM50 benefit high-power switching circuits in terms of thermal management?

A: Its low junction-to-case thermal resistance (3C/W) and robust TO-220 package enable effective heat dissipation. For high-power applications, attach a suitable heatsink to maintain device temperature within the specified -55C to +150C range.

Q: What are the main usage scenarios for the STP12NM50 MOSFET?

A: Typical applications include power management, motor control, switching circuits, uninterruptible power supplies, and amplifier stages due to its high voltage, current rating, and efficient switching characteristics.

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