FZ3600R17HP4_B2 IGBT Modules Specification
FZ3600R17HP4_B2 IGBT Modules Trade Information
- Minimum Order Quantity
- 1 Piece
- Main Domestic Market
- All India
About FZ3600R17HP4_B2 IGBT Modules
Manufacturer: Infineon Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 1700 V Collector-Emitter Saturation Voltage: 2.25 V Continuous Collector Current at 25 C: 3600 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 21 kW Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 150 C Packaging: Tray Brand: Infineon Technologies Maximum Gate Emitter Voltage: 20 V Mounting Style: Chassis Mount Product Type: IGBT Modules Series: Trenchstop IGBT4 - P4