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NTMFS6H801NT1G MOSFET TRENCH

Name: NTMFS6H801NT1G MOSFET TRENCH
Brand: RKSEMITRONICS
Price: 110 INR
Availability: InStock

Price 110 INR/ Piece

Get a Price/Quote

MOQ : 50 Pieces

NTMFS6H801NT1G MOSFET TRENCH Specification

Output
Drain-Source Current

Thermal Conductivity
RJA: 40C/W

Response Time
Fast Switching (<10ns)

Interface
Standard MOSFET leads

Input
Gate-Source Voltage

Power Supply
External DC

Features
Low RDS(on), High Efficiency, Trench Technology

Components
MOSFET (1 unit)

Usage
Switching, Power Management

Operating Temperature
-55C to +175C

Power Source
Electronic Circuit Supply

Product Type
MOSFET

Application
Automotive, Power Supply Circuits, DC-DC Converter, Motor Control

Rated Voltage
80V

Supply Voltage
Up to 80V

Size
Standard SO-8FL

Dimension (L*W*H)
5.00mm x 6.00mm x 1.05mm

Function
N-channel Trench MOSFET

Color
Black (Body)

Weight
Approx. 0.012g per piece

Current Rating
Max Continuous Drain Current: 80A

Thickness
1.05 mm (max)

Frequency
High-Speed Switching

Minimum Order Quantity
Tape & Reel, Sold in Multiples

Gate Threshold Voltage (Vgs(th))
1.5V (typ)

Polarity
N-Channel

Body Diode Reverse Recovery Time (trr)
43 ns

Qualification
Automotive Qualified (AEC-Q101)

Part Number
NTMFS6H801NT1G

Lead Free Status / RoHS Status
Lead Free, RoHS Compliant

Drain-Source Voltage (Vds)
80V

Technology
Trench MOSFET

Max Pulsed Drain Current (Id, Pulse)
320A

Package Type
SO-8FL

Total Gate Charge (Qg) @ Vgs
61 nC @ 10V

RDS(on) (Max) @ Vgs=10V
4.2 m

Input Capacitance (Ciss)
7830 pF

Mounting Type
Surface Mount (SMD)

NTMFS6H801NT1G MOSFET TRENCH Trade Information

Minimum Order Quantity
50 Pieces

Supply Ability
2 Pieces Per Week

Delivery Time
2 Week

Main Domestic Market
All India

About NTMFS6H801NT1G MOSFET TRENCH

Manufacturer: onsemi Product Category: MOSFET REACH - SVHC: Technology: Si Mounting Style: SMD/SMT Package/Case: SO-8FL-4 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 80 V Id - Continuous Drain Current: 157 A Rds On - Drain-Source Resistance: 2.3 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 64 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 166 W Channel Mode: Enhancement Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: onsemi Configuration: Single Fall Time: 19 ns Forward Transconductance - Min: 128 S Product Type: MOSFET Rise Time: 74 ns 1500 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 70 ns Typical Turn-On Delay Time: 25 ns Unit Weight: 750 mg

High-Efficiency Trench Technology

Employing advanced trench MOSFET technology, the NTMFS6H801NT1G offers outstanding efficiency and low conduction losses. This makes it particularly suited for DC-DC converters, motor control, and automotive power supply circuits where minimal power dissipation and heat generation are critical.

Compact SO-8FL Surface Mount Design

With its surface-mount SO-8FL package (5.00mm x 6.00mm x 1.05mm), the device allows efficient use of PCB space for high-density layouts. The black body and lightweight design (approximately 0.012g per piece) ensure compatibility with modern automated manufacturing processes and compact electronic assemblies.

Automotive Grade Reliability

Qualified to AEC-Q101 automotive standards, this MOSFET is crafted to meet the rigorous demands of automotive environments. It operates reliably in a wide temperature range (-55C to +175C), making it entrusted for automotive, industrial, and demanding electronic power management applications.

FAQ's of NTMFS6H801NT1G MOSFET TRENCH:

Q: How is the NTMFS6H801NT1G MOSFET typically used in electronic circuits?

A: This MOSFET is commonly employed in automotive systems, DC-DC converters, motor control, and general power management circuits requiring fast switching and high efficiency. Its low RDS(on) and high current capability make it ideal for handling significant power loads.

Q: What are the main benefits of using a Trench MOSFET with a low RDS(on)?

A: A low RDS(on) significantly reduces conduction losses during operation, resulting in improved efficiency and less heat generation. This is crucial in power management and automotive applications where energy savings and thermal management are priorities.

Q: When should I select the NTMFS6H801NT1G for my design?

A: Choose this device when your application demands high-speed switching, robust current handling (up to 80A continuous, 320A pulsed), and reliable operation across a broad temperature range. Its AEC-Q101 qualification also makes it suitable for automotive-grade projects.

Q: Where can I source the NTMFS6H801NT1G MOSFET in Malaysia?

A: You can obtain the NTMFS6H801NT1G from authorized suppliers and traders in Malaysia, typically ordering in tape and reel format for automated assembly lines and production efficiency.

Q: What is the process for mounting the SO-8FL package MOSFET?

A: The SO-8FL package is designed for surface-mount technology (SMT) and can be installed using standard SMD assembly processes such as pick-and-place automation followed by reflow soldering techniques.

Q: How does the body diode's fast recovery time (trr) benefit circuit performance?

A: The fast body diode reverse recovery time (43 ns) ensures minimal switching losses and prevents unwanted voltage spikes, contributing to the overall efficiency and reliability of high-speed switching and motor control circuits.

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