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OSG60R108PZ Power MOSFET Module

Name: OSG60R108PZ Power MOSFET Module
Brand: RKSEMITRONICS
Price: 135 INR
Availability: InStock

Price 135 INR/ Piece

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MOQ : 40 Pieces

OSG60R108PZ Power MOSFET Module Specification

Usage
High-speed switching applications, power management systems, inverter circuits

Input
Gate voltage, logic-level compatible

Thermal Conductivity
Efficient thermal interface; suitable for heatsink mounting

Power Supply
DC

Power Source
External DC supply

Operating Temperature
-55C to +150C (junction)

Components
Insulated Gate Bipolar Transistor (IGBT) module, terminals, heatsink mount

Response Time
Fast switching, typical rise/fall time <50ns

Interface
Wire terminal, PCB mount compatible

Output
High-power load switching

IP Rating
IP20 (protected against finger touch, not water resistant)

Features
Low RDS(on) 108 m, high speed switching, TO-247 package, low gate charge

Product Type
Power MOSFET Module

Application
Industrial equipment, motor drives, power conversion units, UPS systems, renewable energy inverters

Rated Voltage
650V

Supply Voltage
650V (maximum drain-source)

Size
Standard power module package

Dimension (L*W*H)
117 mm x 35 mm x 13 mm

Function
Power switching and amplification in high-efficiency power supplies and converters

Color
Black & Silver (standard module package)

Weight
Approx. 80g

Current Rating
60A

Capacity
60A continuous drain current @ Tc=25C

Thickness
Approx. 13 mm

Frequency
Up to several hundred kHz switching

Safety Approvals
RoHS Compliant

Maximum Power Dissipation
250W @ Tc=25C

Gate Threshold Voltage (Vgs(th))
2.0V to 4.0V

Gate Charge (Qg)
76 nC (typical)

Body Diode Reverse Recovery Time
<50ns

Mounting Type
Through hole (screw and flange type), heatsink mountable

RDS(on) (Drain-Source On Resistance)
108 m (max)

Package Type
TO-247 Equivalent Module Package

OSG60R108PZ Power MOSFET Module Trade Information

Minimum Order Quantity
40 Pieces

Supply Ability
1000 Pieces Per Week

Delivery Time
2 Week

Main Domestic Market
All India

About OSG60R108PZ Power MOSFET Module

Type Designator: OSG60R108PZFType of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 101 WMaximum Drain-Source Voltage |Vds 600 VMaximum Gate-Source Voltage |Vgs 30 VMaximum Gate-Threshold Voltage |Vgs(th) 4.5 VMaximum Drain Current |Id 30 AMaximum Junction Temperature (Tj): 150 CTotal Gate Charge (Qg): 37.1 nCRise Time (tr): 71.1 nSDrain-Source Capacitance (Cd): 246 pFMaximum Drain-Source On-State Resistance (Rds): 0.108 OhmPackage: TO220

High-Efficiency Switching Performance

With a low drain-source on resistance and fast switching characteristics, the OSG60R108PZ Power MOSFET Module minimizes conduction and switching losses. This enables it to handle large loads and rapid switching cycles typical in power converters, inverters, and industrial motor drives. Its superior gate charge design further enhances efficiency, supporting operation at frequencies up to several hundred kilohertz.

Robust Thermal Management and Mounting

The module's efficient thermal conductivity, coupled with its screw and flange mounting capability for heatsinks, ensures reliable operation under high power loads. Its compact TO-247 equivalent package, measuring 117 mm x 35 mm x 13 mm, fits easily into standard enclosures while supporting proper cooling for continuous operation at up to 60A and 250W dissipation.

Versatile Industrial Applications

Designed to work in various high-power systems, the OSG60R108PZ excels in motor drives, uninterruptible power supplies, power conversion units, and renewable energy inverters. Its logic-level gate compatibility allows seamless integration with modern control circuits and PCBs, supporting safe and reliable switching in both new designs and retrofit environments.

FAQ's of OSG60R108PZ Power MOSFET Module:

Q: How is the OSG60R108PZ Power MOSFET module mounted for optimal thermal performance?

A: The OSG60R108PZ is designed for through-hole installation and features a screw and flange type mounting, allowing it to be securely attached to a heatsink. This arrangement enhances thermal dissipation, enabling efficient handling of high power loads and helping the module maintain consistent operation.

Q: What are the key benefits of using this module in high-speed switching applications?

A: The OSG60R108PZ offers rapid switching (rise/fall times <50ns), low gate charge (76 nC), and minimal RDS(on) (108 m max). These characteristics reduce overall power losses, improve efficiency, and facilitate high-frequency operation, making the module well-suited for demanding power conversion and inverter applications.

Q: When should I consider using the OSG60R108PZ over other MOSFET modules?

A: This module is recommended for applications requiring high continuous current (up to 60A), high voltage (up to 650V), and efficient switching, such as industrial equipment, renewable energy systems, and UPS units. Its reliability, thermal management, and RoHS compliance also make it a strong choice for modern power electronics design.

Q: What process is involved in integrating the OSG60R108PZ with a PCB or industrial system?

A: The module's through-hole terminals are compatible with both wire connections and PCB mounts. For optimal performance, mount the module onto a heatsink using screws and flanges, and ensure proper interface with gate drivers or logic-level controllers that supply the necessary gate voltage (2.0-4.0V, logic compatible).

Q: Where can the OSG60R108PZ be most effectively applied?

A: It is highly effective in power supplies, inverter circuits, motor drives, UPS systems, and renewable energy installations. Its robust package, electrical capabilities, and protection features make it particularly suitable for industrial and high-reliability environments.

Q: How does its IP20 rating impact product usage?

A: IP20 provides protection against contact with fingers and objects greater than 12mm, but it does not protect against water ingress. This means the OSG60R108PZ should be installed in dry, controlled environments or within an additional enclosure for enhanced protection.

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