OSG60R108PZ Power MOSFET Module Trade Information
- Minimum Order Quantity
- 40 Pieces
- Main Domestic Market
- All India
About OSG60R108PZ Power MOSFET Module
Type Designator: OSG60R108PZFType of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 101 WMaximum Drain-Source Voltage |Vds 600 VMaximum Gate-Source Voltage |Vgs 30 VMaximum Gate-Threshold Voltage |Vgs(th) 4.5 VMaximum Drain Current |Id 30 AMaximum Junction Temperature (Tj): 150 CTotal Gate Charge (Qg): 37.1 nCRise Time (tr): 71.1 nSDrain-Source Capacitance (Cd): 246 pFMaximum Drain-Source On-State Resistance (Rds): 0.108 OhmPackage: TO220